SG25H1:

A high-performance 0.25 µm technology with npn-HBTs up to f_T/f_max= 180/220 GHz.

SG25H3:

A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (f_T/f_max= 110 GHz/180 GHz) to higher breakdown voltages up to 7 V.

SG25H3P Module:

Additional pnp-HBTs with f_T/f_max= 90 GHz/120 GHz are available.

SGB25V:

A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V.

GOD-Module:

Additional integrated complementary RF LDMOS devices with breakdown voltages up to 22 V.

SG13S:

A high-performance 0.13 µm BiCMOS with npn-HBTs up to f_T / f_max= 250 / 300 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS.

SG13B:

Identical to SG13S but without 1.2 V logic CMOS.

Parameter

npn1

npn2

Bipolar Section

A_E

0.21 x 0.84 µm²

0.18 x 0.84 µm²

Peak f_max

190 GHz

220 GHz

Peak f_T

190 GHz

180 GHz

BV_CE0

1.9 V

1.9 V

BV_CB0

4.5 V

4.5 V

V_A

40 V

40 V

ß

200

200

Parameter

High Performance 1

Medium Voltage

High Voltage

pnp
H3P module

Bipolar Section

A_E

0.22 x 0.84 µm²

0.22 x 2.24 µm²

0.22 x 2.24 µm²

0.21 x 0.84 µm²

Peak f_max

180 GHz

140 GHz

80 GHz

120 GHz

Peak f_T

110 GHz

45 GHz

30 GHz

90 GHz

BV_CE0

2.3 V

5 V

>7 V

-2.5 V

BV_CB0

6.0 V

15.5 V

21.0 V

-4.0 V

V_A

30 V

30 V

30 V

30 V

ß

150

150

150

100

Parameter

High Performance

Standard

High Voltage

Bipolar Section

A_E

0.42 x 0.84 µm²

0.42 x 0.84 µm²

0.42 x 0.84 µm²

Peak f_max

95 GHz

90 GHz

70 GHz

Peak f_T

75 GHz

45 GHz

25 GHz

BV_CE0

2.4 V

4.0 V

7.0 V

BV_CB0

>7 V

>15 V

>20 V

V_A

>50 V

>80 V

>100 V

ß

190

190

190

n-LDMOS

p-LDMOS

NLD3GD22C

INLD3GD13A****

PLD3GD19B

BV_DSS*

22 V

13 V

-19 V

I_Dsat**

150 µA/µm

(V_GS = 1.5 V)

150 µA/µm

(V_GS = 1.5 V)

-50 µA/µm

(V_GS = -1.5 V)

I_leakage

< 15 pA/µm

(V_DS = 16 V)

< 10 pA/µm

(V_DS = 8V)

> -10 pA/µm

(V_DS = -8 V)

R_ON

4 Ωmm

4 Ωmm

13 Ωmm

Peak f_max***

48 GHz

40 GHz

27 GHz

Peak f_T***

18 GHz

23 GHz

9.5 GHz

* : @50 pA/µm, **: @V_DS = 5 V , *** : @V_DS= 4 V, **** : substrate isolated

Preliminary target parameters extracted from first prototype preparations.

The values given may differ from the final parameters.

Parameter

SG25H1/H3*

SG13B/13S

SG13S

CMOS Section

Core Supply Voltage

2.5 V

3.3 V

1.2 V

nMOS V_th

0.6 V

0.65 V

0.49 V

nMOS I_Dsat

540 µA/µm

520 µA/µm

500 µA/µm

nMOS I_off

3 pA/µm

10 pA/µm

500 pA/µm

pMOS V_th

-0.56 V

-0.61 V

-0.42 V

pMOS I_Dsat

-230 µA/µm

-220 µA/µm

-210 µA/µm

pMOS I_off

-3 pA/µm

-10 pA/µm

-500 pA/µm

Passives

MIM Capacitor

1 fF/µm²

1.5 fF/µm²

N⁺ Poly Resistor

210 Ω/

-

P⁺ Poly Resistor

280 Ω/

335 Ω/

High Poly Resistor

1600 Ω/

750 Ω/

Varactor C_max/C_min

3

tbd.

Inductor Q@5.8 GHz (with PM2)

20 (1 nH), 15 (1.8 nH)

tbd.

Inductor Q@10 GHz (with TM2)

23 (0.7 nH), 22 (1 nH)

tbd.

Parameter

npn13P

npn13V

Bipolar Section

A_E

0.12 x 0.48 µm²

0.18 x 1.02 µm²

Peak f_max

300 GHz

120 GHz

Peak f_T

250 GHz

45 GHz

BV_CE0

1.7 V

4 V

BV_CB0

5.5 V

16 V

ß

500

450