MPW Schedule 2012 & 2013 and Price Information 2012
General Technology Description
SG25 is the basic 0.25 µm CMOS process. It provides Nmos, Pmos, isolated Nmos and passive components such as poly resistors and MIM capacitors. In addition to the basic CMOS process 3 frontend options and 2 aluminum backend options are offered.
The standard backend option offers 3 thin metal layers and two TopMetal layers (Top-Metal1 - fourth 2 µm thick metal layer, TopMetal2 – fifth 3 µm thick metal layer) and a MIM layer. Together with a high dielectric stack this enables increased RF passive com-
ponent performance.
SG25H1 technology is a high performance BiCMOS technology. The bipolar module H1 is based on SiGe:C npn-HBTs with up to 190GHz transient frequencies and up to 220GHz oscillation frequencies.
SG25H3 technology is a BiCMOS technology, too. The bipolar module H3 based on SiGe:C npn-HBT with up to 110 GHz transient frequencies and up to 180 GHz oscillation frequencies. Additionally, SiGe:C npn-HBTs with breakdown voltages (BVCE0) up to 7 V are offered.
SG25H3P technology is a high-performance complementary BiCMOS technology. In addition to the bipolar module from SG25H3 a high-performance SiGe:C pnp-HBT with up to 90 GHz transient frequencies and 120 GHz oscillation frequencies is offered.
SGB25V is a 21-mask BiCMOS process which combines a 0.25 µm CMOS core with 3types of SiGe:C HBTs.
SGB25RH is a special variant of SGB25V which includes radiation hard IP for space applications.
GD module (SGB25V) adds, by 3 mask steps, a complementary LDMOS module to the SGB25V process (nLDMOS up to 22 V, pLDMOS up to -16 V breakdown voltage and an isolated nLDMOS device).
SG13S technology has a very high bipolar performance with up to 250 GHz transient frequencies and up to 300 GHz oscillation frequencies. The process offers a 7-layer Al-BEOL, including a MIM capacitor. 5 thin metal layers are based on 130 nm design rules. Two TopMetal layers (TopMetal1 - 2 µm thick metal layer, TopMetal2 – 3 µm thick metal layer) are for high Q passives. This technology offers CMOS devices with 130 nm gate length and 1.2 V core voltage and high voltage CMOS devices with 3.3 V core voltage. Further digital IP is available.
SG13C technology is an RF CMOS technology which includes all features of SG13S, but no bipolar HBTs.
SG13G2 technology has a very high bipolar performance with up to 300 GHz transient frequencies and up to 500 GHz oscillation frequencies. The process offers a 7-layer Al-BEOL, including a MIM capacitor. 5 thin metal layer are based on 130 nm design rules. Two TopMetal layers (TopMetal1 - 2 µm thick metal layer, TopMetal2 – 3 µm thick metal layer) are for high Q passives. This technology offers CMOS devices with 130 nm gate length and 1.2 V core voltage and high voltage CMOS devices with 3.3 V core voltage.
RFMEMS module is an additional option in SG25H1 and SG25H3 technologies which offers integrated capacitive RFMEMS switch devices for frequencies between 30 GHz to 110 GHz.
LBE module (Localized Backside Etching) is offered in all technologies to remove silicon locally to improve passive performance.
Cu-plating is an additional module with 2 layer copper, BCB and gold-pads offered in SGB25V, SG25H1 and SG25H3.
BEOL (only) Backend of Line Runs are offered for testing of passive structures only. Produced are Metal1 and all layers above. These runs are offered either for 0.25 µm BEOL layer stack (SG25) or 0.13 µm layer stack (SG13). RF-MEMS switch and LBE can be ordered together with BEOL (only) runs.
2.1 MPW Price Information 2012
Non Commercial Access
For European non profit and educational institutions a discount of 25 % is offered via Europractice ( www.europractice-ic.com ) and there is no minimum size requirement for all runs marked with x only.
For European universities there is a 40% discount for SG13S and SG13G2 via Europractice program in 2012. The same is valid for project partners in public funded projects. Further costs for using LBE module in all technologies and RFMEMS module in SG25H3 and SG25H1 are reduced to 2500 € per order and technology.
2.1.1 Prices for technologies
Process |
Area price / mm² |
SGB25V |
€ 2500 |
SGB25RH |
€ 2600 + 10000 € per Run |
SG25H1 |
€ 6800 |
SG25H3 |
€ 3800 |
SG13S |
€ 7000 |
SG13C |
€ 4500 |
SG13G2 |
€ 7500 |
2.1.2 Prices for modules
Module (Process) |
Price |
GD (SGB25V) |
€ 450 (per mm²) |
PNP (SG25H3) |
€ 2000 (per mm²) |
LBE (all) |
5000 € per order and technology |
RFMEMS switch (H1, H3) |
10000 € per order and technology |
Cu-plating |
17000 € per order* |
BEOL (only) 0.25µm (SG25) |
€ 800 (per mm²) |
BEOL (only) 0.13µm (SG13) |
€ 1000 (per mm²) |
* This price is valid if only one customer is using this option per MPW run. Contact IHP if reduced price is possible for a certain MPW run.
2.2 MPW Schedule 2012
2.2.1 Schedule for complete technologies
TAPE IN |
Shipment |
SGB25 |
SG25 |
SG13 |
|||
|
|
V |
RH |
H1 |
H3 |
S (C) |
G2 |
Dec 12, 11 |
20 Apr, 12 |
|
|
|
|
x |
x |
Jan 09, 12 |
Apr 02, 12 |
x |
|
x1 |
x |
|
|
Apr 16, 12 |
Aug 27, 12 |
|
|
|
|
x |
|
Apr 30, 12 |
Jul 23, 12 |
x |
|
x3 |
x |
|
|
Jul 30, 12 |
Nov 19, 12 |
|
|
|
|
x |
x |
Sep 03, 12 |
Nov 27,12 |
x |
x2 |
x1 |
x |
|
|
Nov 05, 12 |
Feb 11, 13 |
x |
x2 |
x1 |
|
|
|
Dec 10, 12 |
19 Apr, 13 |
|
|
|
|
x |
x |
1 Shipment 7 days later
2 Shipment 21 days later
3 Run without priority
0.13 µm Runs
2.2.2 Schedule for modules
TAPE IN |
Shipment |
GD |
H3P |
RF-MEMS |
LBE1 |
Cu Plating |
Jan 09, 12 |
May 14, 12 |
|
x |
x |
x |
|
Apr 30, 12 |
Aug 27, 12 |
x |
|
x |
x |
x |
Sep 03, 12 |
Jan 07, 13 |
|
x |
x |
x |
x |
Nov 05, 12 |
March 11,13 |
x |
|
x |
x |
x |
1 Localized Backside Etching shipment 12 days later than standard shipment
2 Cu Plating Shipment 8 weeks after standard shipment
2.2.3 BEOL (only) runs
TAPE IN |
Shipment |
SG25 |
SG13 |
RF-MEMS |
LBE |
Cu Plating |
March 12 |
May 12 |
x |
|
x |
x |
|
Oct. 12 |
Dec. 12 |
|
x |
x |
x |
x |
2.3 MPW Schedule 2013
Changes are possible till September 1st 2012.
2.3.1 Schedule for complete technologies
TAPE IN |
Shipment |
SGB25 |
SG25 |
SG13 |
|||
|
|
V |
RH |
H1 |
H3 |
S (C) |
G2 |
Nov 05, 12 |
Feb 11, 13 |
x |
x2 |
x1 |
|
|
|
Dec 10, 12 |
Apr 19, 13 |
|
|
|
|
x |
x |
Feb 11, 13 |
May 06, 13 |
x |
x2 |
|
x |
|
|
(Apr 15, 13) |
Aug 26, 13 |
|
|
|
|
x |
x |
Apr 29, 13 |
Jul 22, 13 |
x |
x2 |
x1 |
x |
|
|
Jul 29, 13 |
Nov 19, 13 |
|
|
|
|
x |
x |
Sep 02, 13 |
Nov 25,13 |
x |
x2 |
x1 |
x |
|
|
Nov 04, 13 |
Feb 17, 14 |
x |
x2 |
x1 |
|
|
|
Dec 09, 13 |
21 Apr, 14 |
|
|
|
|
x |
x |
1 Shipment 7 days later
2 Shipment 21 days later
0.13 µm Runs
2.3.2 Schedule for modules
TAPE IN |
Shipment |
GD |
H3P |
RF-MEMS |
LBE1 |
Cu Plating (with IZM)2 |
Nov 05, 12 |
March 11, 13 |
x |
|
x |
x |
x |
Feb 11, 13 |
May 27, 13 |
|
x |
x |
x |
x |
Apr 29, 13 |
Aug 26, 13 |
x |
|
x |
x |
x |
Sep 02, 13 |
Jan 06, 14 |
|
x |
x |
x |
x |
Nov 04, 13 |
March 17, 14 |
x |
|
x |
x |
x |
1 Localized Backside Etching shipment 12 days later than standard shipment
2 Cu Plating Shipment 8 weeks after standard shipment
2.4 Information on Minimum Size per MPW Run 2012
There is no minimum area request if a technology or module is offered in schedule tables in chapter 2.2 and 2.3.
If this is not the case, a technology or module can be ordered with a minimum area given in the following table. A waiver from foundry and registration 4 weeks before TAPE out is necessary in this case.
Process |
Min Area [mm²] |
Min Area1 for discount |
SG25H1
|
10 |
10 |
SG25H3
|
12 |
15 |
SG25H3P
|
10 |
12 |
SGB25V |
- |
17 |
SGB25RH |
10 |
20 |
GD-module |
15 |
20 |
SG13S |
- |
10 |
SG13C |
- |
no |
SG13G2 |
5 |
10 |
1 Ask for special price if you need more than this area for one MPW run
Delivery
40 diced samples, E-test data including RF measurements. Thinning of samples between 300 µm and 370 µm.
Hot lots and additional dies are available upon request.
Engineering Runs
An engineering run consists of a separate mask set and the delivery of six wafers. For an Engineering Run a minimum lot size of 18 wafer will be started. Few wafer will be stopped as backup before Backend. Additional wafers are available upon request. Total test field area is 10.62mm times 21.87mm = 232.3 mm2. To calculate the usable area for customers you have to subtract test structure area.
Volume Runs
A volume run consists of a separate mask set with reduced engineering costs and minimum wafer order. For detailed information contact IHP.
IHP's General Terms and Conditions apply.
For further information please contact:
Dr. Rene Scholz
IHP GmbH
Im Technologiepark 25
15236 Frankfurt (Oder)
Germany
Phone: +49 335 5625 647
Fax: +49 335 5625 327
Email: scholz@ihp-microelectronics.com
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