Overview >>                      0.13 µm BiCMOS Technologies

 

 

The objective of the project is the development of a technology suitable for system-on-a-chip (SoC) solutions for wireless and broadband communication at highest data rates and highest transmission frequencies. The 0.13 µm BiCMOS process will serve as a platform for the investigation of new device, circuit and system concepts within various research projects of IHP. Moreover, the technology is now available to research and development partners via the IHP prototyping service.

 

The integration of mm-wave RF circuits with high-speed, high-density digital blocks in next generation SiGe BiCMOS technologies is a key for cost-effective realizations of high-bandwidth communication systems. HBTs with cut-off frequencies above 200 GHz facilitate new applications such as wireless links in the 60 GHz band, fiber optics communication systems with data rates above 40 Gbps, and automotive radar at 77 GHz.

 

Since 2009, the 0.13 µm BiCMOS technology is available as part of the multi-project-wafer (MPW) service of IHP. Two MPW runs are scheduled per year. The process qualification of the 0.13 µm BiCMOS technology will be started in 2009.

 

The technology provides two types of SiGe HBTs optimized for high frequencies and high breakdown voltages, respectively. New features of the HBT devices compared to previous generations are self-aligned base and emitter regions and minimal emitter widths of 120 nm. The high-speed HBTs feature cut-off frequencies f_T of 250 GHz and maximum oscillation frequencies fmax of 300 GHz at a break-down voltage BV_CEO of 1.7 V. The high-voltage HBTs feature f_T/ f_max/ BV_CEO of 45 GHz/ 120 GHz/ 4 V.

 

CMOS transistors with two gate oxide thicknesses are available for operating voltages of 1.2 V and 3.3 V. The 1.2 V NMOS and PMOS transistors exhibit off-currents of 50 pA/μm and on-currents of 470 μA/μm and 190 μA/μm, respectively. In addition, drain-extended MOS devices (DMOS) for operating voltages between 5V and 20V are currently under development. The aluminum back-end-of-line offers up to seven metal interconnect layers. These include two metal layers with thicknesses of 2 μm and 3 μm facilitating the integration of passive components such as inductors, transformers, and transmission lines with high quality factors.