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   Technology Department

 


IHP’s Technology Department is focused on the development of technologies with high performance for very high frequencies, low cost technologies for system-on-chip applications, and running these technologies in the pilot line for IHP’s projects and for the worldwide MPW & Prototyping Service.

 

The development is based on a “value added approach” in which “value” is added to standard CMOS technologies by modular extension (SiGe:C HBT’s, LDMOS transistors, embedded flash memories, passives…)

 

Main research topics are currently related to the development of a 0.13 µm SiGe BiCMOS technology in addition to the existing 0.25 µm technologies. This involves considerable efforts in upgrading the equipment and developing the technological steps.

 

Concepts for HBTs and integrated LDMOS for the 0.13 µm technology level are being worked out. Considerable attention is being paid to the further extension of the HBT’s performance limits and the integration of complementary high-performance HBTs. Additional technology modules such as flash memory are being developed for integration. High-Q passives, varycaps, schottky diodes and high-capacitance MIMs based on new high-K materials are under investigation.

 

Considerable efforts are being made to further qualify and extend IHP’s running 0.25 µm technology services via MPW and Prototyping.

 

Technological competence goes back a long way at the IHP. About half of the institute’s staff is engaged with technology including the 24/7 clean room operation.

 




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30-11-11
Success story of Dotfive
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10-05-11
Scientist from IHP organizes symposium at Spring Meeting of EMRS in Nice
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03-03-11
FEI Tecnai Osiris Symposium am 30. März 2011 im IHP
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28-02-11
Consortium claims SiGe frequency record
At the International Solid-State Circuits Conference, IHP GmbH and the University of Wuppertal presented the latest results of the DotFive project. ...
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08-12-10
IHP presents new transistors and switches for hight frequency electronics.
IHP with two contributions at the International Electron Devices Meeting (IEDM) in San Francisco, CA.
[more]


01-12-10
HELIOS Shows Off Laser Silicon Progress
... Technical University of Valencia, the University of Barcelona and DAS Photonics, all of Spain; IHP and Berlin University of Technology, both of Germany; ...
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01-12-10
Seeking Faster Devices At IEDM
Several sessions at the upcoming 2010 IEDM will focus in improvements in ... B. Heinemann and a team from IHP Microelectronics sought gains in fT and fMAX ...
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27-09-10
2010 IEEE International Electron Devices Meeting (IEDM 2010)
San Francisco, CA USA
December 6 - 8, 2010 [more]


22-09-10
„ACADEMIC EXCHANGE AGREEMENT“ between IHP and Tohoku University, Japan
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09-02-10
EU project DOTFIVE presents circuits operating up to 650GHz at ISSCC in San Francisco, USA on February 11, 2010 (International Solid-State Circuits Conference).
The chips were designed at University of Wuppertal and fabricated using IHP SiGe technology with highest HBT performance developed within the frame of the project.
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