Overview >> BOOM
| The Objective | BOOM pursues the advancement of Silicon-on-Insulator (SOI) technology to develop compact, cost-effective, and power efficient silicon photonic components that enable photonic Tb/s capacity systems for current and new generation high-speed fiber-optic core networks. BOOM develops fabrication techniques as well as flip-chip bonding and wafer-scale integration methods to fabricate and mount the complete family of electro-optical III-V and electronic Silicon components on SOI optical boards. more |
| IHP’s Contribution | Main task of IHP is the development of SiGe ICs for the BOOM router. Especially a SiGe driver IC for a broadband Electro-Absorption Modulator (EAM) will be realized by IHP. Target semiconductor technology is IHP’s SG25H3 0.25 µm SiGe BiCMOS technology. The driver has to achieve a high output swing (>2 V single-ended) with very short rise- and fall-times. |
| Funding | This project is funded by European Commission with Framework 7 (FP7). |
| Project Partners | National Technical University of Athens (Greece), Heinrich-Hertz-Institut (Germany), Interuniversity Microelectronics Centre (IMEC, Belgium), AMO GmbH (Germany), Technical University Berlin (Germany), Technical University Eindhoven (Netherlands), Exelite Innovations Ltd. (Greece), LioniX B.V. (Netherlands), Telecom Italia S. p. A. |
| External Links | Project Homepage |