GaP collector for Terahertz SiGe HBT

Future evolution of IHP technologies and their application in circuits and systems follows a “More than Moore” strategy, i.e. the objective is to develop added-value technologies by the modular extension of IHP´s BiCMOS baseline platform. A strategically important goal is therefore the continuous improvement in performance of SiGe:C HBT BiCMOS technology up to the terahertz range with high power. One possible way to advance further into the high power / terahertz region is to replace the classical n-Si collector by a ternary wide band gap / high saturation velocity III-V material system.  In particular, the project evaluates the In_1-xGa_xP wide band gap / high saturation velocity collector concept for SiGe:C BiCMOS. [1]

Development of high quality InGaP growth processes on pseudomorphic Si_0.8Ge_0.2/Si(001) substrates by GSMBE and MOCVD systems in close collaborations with project partners. Detailed materials science and electrical heterostructure characterization to evaluate InGaP collector concept for IHP´s SiGe:C HBT BiCMOS technology.

Internal IHP project.

• Humboldt-University Berlin (Germany) / T. Masselink
• Helmholtz Centre for Materials & Energy Berlin (Germany) / T. Hannappel
• Paul Drude Institute Berlin (Germany) / A. Trampert

O. Skibitzki, F. Hatami, Y. Yamamoto, P. Zaumseil, A. Trampert, M. A. Schubert, B. Tillack, W. T. Masselink and T. Schroeder, J. Appl. Phys. 111, 073515 (2012).