ASICs are designed in IHP`s ultra-fast SiGe BiCMOS
- 0.25 & 0.13 µm SiGe BiCMOS technologies with HBTs up to 500 GHz running in IHP`s pilot line in Frankfurt (Oder), Germany
- Integrated RF-MEMS and LDMOS as well as localized backside etching (LBE) and copper plating are technology extensions
- Circuit design & chip manufacturing for small & medium quantities are available for service
Details
Email
