ASICS are designed in IHP`s radiation hard SiGe BiCMOS
- 0.25 & 0.13 µm SiGe BiCMOS technologies with HBTs up to 500 GHz running in IHP`s pilot line in Frankfurt (Oder), Germany
- Integrated RF-MEMS and LDMOS as well as localized backside etching (LBE) and copper plating are technology extensions
- The 0.25 µm technology SGB25V is being evaluated by ESA
- Radiation hard CMOS libraries are available; HBTs are radiation hard
- Circuit design & chip manufacturing for small & medium quantities are available for service










