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Strain engineered Ge micro- and nanostructures

Objective

The project aim is to carry out fundamental and applied research on the physics of strain engineered Germanium (Ge) micro- and nanostructures to enable the integration of innovative Ge modules for IHP´s   More than Moore SiGe BiCMOS technology platform.  In the area of fundamental research, advanced heteroepitaxy approaches are in the focus to produce by patterned wafers e.g. strain engineered Ge / Si heterostructures without misfit dislocations at the interface by compliance. In the area of applied research, tensile strained Ge microbridge structures are investigated as optically active gain medium to set up a Si CMOS compatible laser source.  To carry out modern materials science on strain engineered micro- and nanostructures, the use of European 3rd generation synchrotron resources is a key part of the project work.

IHP`s Contribution

The “Strain engineered Ge micro- and nanostructure” project is a joined effort of IHP scientists from different departments including the Technology department (Fabrication of Ge/Si nanostructures by selective chemical vapor deposition and lithography) as well as the Materials Research Department together with the Joint Lab at BTU Cottbus-Senftenberg (Structural and optoelectronic characterization using state-of-the-art investigation techniques and theory concepts).

Funding

DFG as well as internal IHP project funds.

Project Partners

  • European Synchrotron Radiation Facility (ESRF) in Grenoble (France) / ID 01 (T. Schülli)
  • University Milano – Bicocca (Italy) / Physics of Matter  (L. Miglio, F. Montalenti, A. Marzegalli)
  • University Roma Tre / Faculty of Physics (Giovanni Capellini)
  • University Pisa / Faculty of Physics  (Michele Virgilio)
  • University of California Los Angeles (United States) / Faculty of Electrical Engineering (Ya-Hong Xie)
  • ETH Zürich (Switzerland) / Faculty of Electrical Engineering  (Hans v. Känel)
  • University of Stuttgart / Institute of Semiconductor Technology (J. Schulze)
  • Weierstrass Institute for Applied Analysis and Stochastics  (A. Mielke / T. Koprucki / M. Thomas)
  • University of Kassel / Computational Electronics and Photonics (B. Witzigmann)
  • University Bremen / Solid State Physics (J. Falta / J.I. Flege / T. Schmitt)

Selected Publications

Strain engineered micro- and nanostructures on patterned wafers

G. Kozlowski et al., Applied Physics Letters 99, 141901 (2011)

P. Zaumseil et al., Solid State Phenomena 43, 178 – 179 (2011)

G. Kozlowski et al., Journal of Applied Physics 110, 053509 (2011)

P. Zaumseil et al., Journal of Applied Physics 109, 023511 (2011)

G. Kozlowski et al., Nanotechnology 23, 115704 (2012)

P. Zaumseil et al., Nanotechnology 23, 355706 (2012)

P. Zaumseil et al., Journal of Applied Crystallography 46, 868 (2013)

P. Zaumseil et al., Thin Solid Films 557, 50 (2014)

F. Montalenti et al., Physical Review 89, 014101(2014)

M. H. Zoellner et al., ACS Applied Materials and Interfaces 7, 9031 (2015)

G. Niu et al., Scientific Reports 6, 22709 (2016)

O. Skibitzki et al., ACS Applied Materials and Interfaces 8, 26374 (2016)

V. Schlykow et al., Applied Physics Letters 109, 202102 (2016)

 

 

                                                             

Strain engineered Ge microbridges for Si CMOS compatible laser applications

G. Capellini et al., Journal of Applied Physics 111, 0073518 (2012)

G. Capellini et al., Journal of Applied Physics 113, 013513 (2013)

M. Virgilio et al., Journal of Applied Physics 114, 243102 (2013)

M. Virgilio et al., Physical Review B 87, 235313 (2013)

G. Chahine et al., Journal of Applied Crystallography 47, 762 (2014)

G. Capellini et al., Optics Express 22, 399 (2014)

T. Grzela et al., Journal of Applied Physics 115, 074307 (2014)

G. Chahine et al., Applied Physics Letters 106, 071902 (2015)

D. Peschka et al., IEEE Photonics Journal 7(3), 1502115 (2015)

M. Virgilio et al., Optics Express 23, 5930 (2015)

M. Virgilio et al., Applied Physics Letters 118, 233110 (2015)

D. Peschka et al., Optical & Quantum Electronics 48, 156 (2016)

Y. Yamamoto et al., Materials Science in Semiconductor Processing in press (2016)

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.