Embedded RRAM for SoC applications

Non-volatile memory (NVM) is of interest for many different system applications in Si-based CMOS technologies, including high-end and mobile computing, consumer electronics, and various sensor and medical health care devices. Among the NVM technologies, Resistance change Random Access Memory (RRAM) is a major candidate for which the resistance in a metal-insulator-metal (MIM) structure can be switched by the applied voltage. Following the “More than Moore” (MtM) approach, the back-end-of-line (BEOL) integration of MIM memory cells in the (Bi)CMOS technology allows a cost-effective realization of embedded RRAMs for system-on-chip (SoC) applications, e.g. wireless sensor networks. By combining the MIM devices (R) with selection transistors (T), the 1T-1R cells offer good scalability, long retention time, and rapid read/write times. Besides the BEOL integration of 1T-1R cells into a memory array, IHP’s research on RRAM is focused on clarifying and gaining a deep understanding of the exact atomic-scale mechanism of the observed resistance change effect.

IHP’s research activities on RRAM mainly focus on developing a memory array for system-on-chip (SoC) applications as well as investigating the physical mechanism of the resistive switching behavior.

DFG funding under project number SCHR 1123 / 7-1.

Internal IHP project.

European collaborations on embedded RRAM:

[1] D. Walczyk et al., IEEE Explore, International Semiconductor Conference Dresden (ISCDG) 2012, p. 143 – 146, Grenoble 2012, 24th – 26th September 2012, MinaTec Grenoble (France).

[2] T. Bertaud et al., Appl. Phys. Lett. Vol. 101, 143501 (2012).

[3] M. Sowinska et al., Appl. Phys. Lett. 100, 233509 (2012).

[4] T. Bertaud et al., Thin Solid Films 520, 4551 (2012).

[5] Ch. Walczyk. et al., IEEE Trans. Electron Devices 58, 3124 (2011).

[6] Ch. Walczyk et al., J. Appl. Phys. 105, 114103 (2009).