Embedded RRAM for SoC applications
Non-volatile memory (NVM) is of interest for many different system applications in Si-based CMOS technologies, including high-end and mobile computing, consumer electronics, and various sensor and medical health care devices. Among the NVM technologies, Resistance change Random Access Memory (RRAM) is a major candidate for which the resistance in a metal-insulator-metal (MIM) structure can be switched by the applied voltage. Following the “More than Moore” (MtM) approach, the back-end-of-line (BEOL) integration of MIM memory cells in the (Bi)CMOS technology allows a cost-effective realization of embedded RRAMs for system-on-chip (SoC) applications, e.g. wireless sensor networks. By combining the MIM devices (R) with selection transistors (T), the 1T-1R cells offer good scalability, long retention time, and rapid read/write times. Besides the BEOL integration of 1T-1R cells into a memory array, IHP’s research on RRAM is focused on clarifying and gaining a deep understanding of the exact atomic-scale mechanism of the observed resistance change effect.
IHP’s research activities on RRAM mainly focus on developing a memory array for system-on-chip (SoC) applications as well as investigating the physical mechanism of the resistive switching behavior.
DFG funding under project number SCHR 1123 / 7-1.
Internal IHP project.
European collaborations on embedded RRAM:
 D. Walczyk et al., IEEE Explore, International Semiconductor Conference Dresden (ISCDG) 2012, p. 143 – 146, Grenoble 2012, 24th – 26th September 2012, MinaTec Grenoble (France).
 T. Bertaud et al., Appl. Phys. Lett. Vol. 101, 143501 (2012).
 M. Sowinska et al., Appl. Phys. Lett. 100, 233509 (2012).
 T. Bertaud et al., Thin Solid Films 520, 4551 (2012).
 Ch. Walczyk. et al., IEEE Trans. Electron Devices 58, 3124 (2011).
 Ch. Walczyk et al., J. Appl. Phys. 105, 114103 (2009).