IHP offers research partners and customers access to its powerful SiGe:C BiCMOS technologies and special integrated RF modules.
The technologies are especially suited for applications in the higher GHz bands (e.g. for wireless, broadband, radar). They provide integrated HBTs with cut-off frequencies of up to 500 GHz and integrated LDMOS devices with breakdown voltages of up to 22 V, including complementary devices.
The following SiGe:C BiCMOS Technologies are available for
MPW & Prototyping
A high-performance 0.25 µm technology with npn-HBTs up to fT/fmax= 180/220 GHz.
A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (fT/fmax= 110 GHz/180 GHz) to higher breakdown voltages up to 7 V.
A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V.
A high-performance 0.13 µm BiCMOS with npn-HBTs up to fT / fmax= 250/300 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS.
A 0.13 µm BiCMOS technologies with same device portfolio as SG13S but much higher bipolar performance with fT/fmax = 300/500 GHz
The backend offers 3 (SG13: 5) thin and 2 thick metal layers (TM1: 2 μm, TM2: 3 μm).
There is a schedule for the MPW & Prototyping runs.
A cadence-based mixed signal design kit is available. For high frequency designs an analogue Design Kit in ADS can be used. IHP’s reusable blocks and IPs for wireless and broadband are offered to support designs.