IHP offers research partners and customers access to its powerful SiGe:C BiCMOS technologies and special integrated RF modules.
These technologies are especially suited for applications in the higher GHz bands (e.g. for wireless, broadband, radar). They provide integrated HBTs with cut-off frequencies of up to 500 GHz and integrated LDMOS devices with breakdown voltages of up to 22 V, including complementary devices.
SiGe:C BiCMOS Technologies for MPW & Prototyping:
A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (fT/fmax= 110/180 GHz) to higher breakdown voltages up to 7 V.
|SG25H4:||A high performance BiCMOS technology. Process is identical to former SG25H1 technology, only Process Design Kit is new. The bipolar module is based on H1 SiGe:C npn HBT’s with up to 200 GHz transit frequencies and up to 220 GHz oscillation frequencies.|
A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V.
A high-performance 0.13 µm BiCMOS with npn-HBTs up to fT / fmax= 250/340 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS.
A 0.13 µm BiCMOS technology with much higher bipolar performance of fT/fmax = 300/500 GHz.
The backend offers 3 (SG13: 5) thin and 2 thick metal layers (TM1: 2 μm, TM2: 3 μm).
A cadence-based mixed signal design kit is available. For high frequency designs an analogue Design Kit in ADS can be used. IHP's reusable blocks and IPs for wireless and broadband are offered to support your designs.
There is a schedule for the MPW & Prototyping runs.