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  • SiGe:C BiCMOS technologies

Low-Volume & Multi-Project Service

IHP offers research partners and customers access to its powerful SiGe:C BiCMOS technologies and special integrated RF modules. 

These technologies are especially suited for applications in the higher GHz bands (e.g. for wireless, broadband, radar). They provide integrated HBTs with cut-off frequencies of up to 500 GHz.


Your access to powerful SiGe:C BiCMOS technologies and special integrated RF and Si photonic


SiGe:C BiCMOS Technologies for MPW & Prototyping:


A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (fT/fmax= 110/180 GHz) to higher breakdown voltages up to 7 V.


A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V.


A high-performance 0.13 µm BiCMOS with npn-HBTs up to fT / fmax= 250/340 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS.


A 0.13 µm BiCMOS technology with much higher bipolar performance of fT/fmax = 300/500 GHz.

SG25H5_EPICA monolithic photonic BiCMOS technology combining 0.25 µm CMOS, high-performance npn HBTs (fT / fmax = 220/290 GHz), and full photonic device set for C/O-band.



The backend offers 3 (SG13: 5) thin and 2 thick metal layers (TM1: 2 μm, TM2: 3 μm). 


A cadence-based mixed signal design kit is available. For high frequency designs an analogue Design Kit in ADS can be used. IHP's reusable blocks and IPs for wireless and broadband are offered to support your designs. 



There is a schedule for the MPW & Prototyping runs.

The following Modules are available


The Localized Backside Etching module is offered to remove silicon locally to improve passive performance (available in all technologies).

PIC:Additional photonic design layers together with BiCMOS BEOL layers on SOI wafers.
Module is an additional option in SG13S and SG13G2 technology which offers RF grounding by vias through silicon to improve RF performance.

Key Specification

Feature                         SG13SSG13G2SG25H3SGB25V
Technology node (nm)130130250250
fmax NPN (GHz)34050018095
CMOS core supply (V)1.2, 3.31.2,
CMIM (fF/μm²)
Poly Res (Ω/□)250275210-280210-310
High Poly Res (Ω/□ )1300136016002000
BEOL7× Al7× Al5×Al5×Al
Varactor (Cmax/Cmin)1.71.733
Q inductor37*37*37*37*

 *1 nH (with LBE) 




Bipolar Section

Feature                     SG13SSG13G2 SG25H3 SGB25V
NPN1 fT / fmax (GHz)250 / 340300 / 500 110 / 18075 / 95
NPN2 fT / fmax (GHz)45 / 165120 / 33045 / 140 45 / 90
NPN3 fT / fmax (GHz)25 / 8025 / 70
NPN2 BVCE0 (V)3.72.554
NPN3 BVCE0 (V)77
NPN1 BVCB0 (V)54.867
NPN2 BVCB0 (V)158.510.515
NPN3 BVCB0 (V)2120

CMOS Section

FeatureSG25H3*                           SG13S**
Core Supply Voltage (V) 2.5               3.3          1.2
nMOSVTH (V)0.6             0.71          0.5
IOUT*** (μA/μm)540              280          480
IOFF (pA/μm)3                10           500
pMOSVTH (V)-0.6            -0.61        -0,47
IOUT (μA/μm)-230             -220         -200
IOFF (pA/μm)-3               -10         -500

* Parameters for SGB25V are similar

** Parameters for SG13G2 are similar

*** @ VG = 2.5 V



Passive Section

MIM Capacitor (fF/μm²)111.51.5
N+ Poly Resistor (Ω/□)210205--
P+ Poly Resistor (Ω/□)280310250260
High Poly Resistor (Ω/□)1600200013001360
Varactor Cmax/Cmin331.71.7
Inductor Q@5 GHz18 (1 nH)18 (1 nH)18 (1 nH)18 (1 nH)
Inductor Q@10 GHz20 (1 nH)20 (1 nH)20 (1 nH)20 (1 nH)
Inductor Q@5 GHz37 (1 nH)*37 (1 nH)*37 (1 nH)*37 (1 nH)*

*with LBE



Cu BEOL Module

Photonic Integrated Circuit Module


Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.