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Adaptive Materials for Sensing and Computing

Main Fields:

  • Broadband Plasmonic devices
  • RF near field sensing
  • Non-volatile memories
  • Neuromorphic devices

 

Main Focus:

The main focus of the “Adaptive Materials for Sensing and Computing” group is the diversification of the silicon chips utilising IHP SiGe BiCMOS technologies by establishing integrated broadband sensing platforms, integrated memory devices and CMOS compatible bio-inspired devices. Current research activities of the group can be clustered in two sections:

 

Basic research:

(a) Exploring semiconductor physics for novel broadband sensing platforms and bio-inspired devices is the primary activity of the basic research regime. On the broadband sensing aspect, devising tunable plasmonic platform based on group IV materials (Si, Ge, Sn, Graphene) with the tuning frequency ranging from sub THz to near infra-red spectrum is one of the main goals. Such broadband plasmonic sensors are being applied to detection and characterization of biomolecules.

(b) Utilising resistive memory devices to obtain CMOS/BiCMOS compatible neuromorphic computing is the focus of the research activity of bio-inspired devices. Such devices are envisaged for low power analog signal processing applications.

 

Applied research:

(a) The applied research involves the integration of novel sensing techniques and non-volatile memory devices with CMOS/BiCMOS technology. Developing monolithic high-frequency (5 GHz – 20 GHz) biosensors for applications like sputum characterization, immunosensing, glucose sensing and devising CMOS compatible electrical immobilization technique of biomolecules (particles) are the primary activities in the area of applied sensors. Hybrid integration of microfluidic platform with such CMOS/BiCMOS sensors is as well explored in this activity.

(b) Understanding the switching physics of CMOS compatible transition metal oxide based resistive memory devices is the focus of non-volatile memory research. Furthermore, module integration of non-volatile memory array in the BiCMOS technology of IHP is the goal of the applied research regime.

 

Main Achievements:

  • Enhanced SERS using graphene plasmonics
  • 6 GHz dielectric immunosensor
  • CMOS compatible dielectrophoretic platform
  • CMOS compatible nanoguided filament for stable
  • switching of ReRAM devices

 

 

Contact
Contact

Dr. Christian Wenger

 

IHP 

Im Technologiepark 25

15236 Frankfurt (Oder)

Germany

Contact
Contact

Subhajit Guha

 

IHP 

Im Technologiepark 25

15236 Frankfurt (Oder)

Germany

Basic Research Projects

Neuromorphic devices

Group IV plasmonics

Applied Research Projects

EXASENS

Embedded RRAM

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.