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Electrical Characterization


Develop and maintain capabilities for electrical characterization of IHP’s technologies, including process monitoring and control, compact device modeling, RF characterization, ESD testing, technology qualification, mixed signal prototype testing, radiation hardness testing. Comprehensive on wafer characterization of devices and circuits for development and qualification of innovative technologies.


Dr. Roland Sorge



Im Technologiepark 25

15236 Frankfurt (Oder)


Phone: +49 335 5625 127


According to the demand for a further improvement of the RF performance of the devices fabricated in IHP’s pilot line the comprehensive characterization of these novel devices and circuits is a permanent challenging task. In order to enable circuits which require devices with a high side operation capability several concepts for a modular integration of deep isolating n-wells are subject of current developments. Furthermore we work on the substantial improvement of the radiation tolerance of complementary RF power MOS transistors capable for operation at voltages  > 20V.  First results obtained verify our novel radiation hardening by design approach which enables a strong reduction of device parameter degradations due hot carrier injection (HCI) and ionizing radiation (TID) and device malfunctions resulting from single event effects (SEEs) caused by irradiation with heavy ions.

Main Achievements

IHP's electrical characterization labs meet state of the art requirements for the development, control and qualification of its innovative technology portfolio. We provide the key data for verification of novel concepts for devices and systems for terrestrial and aerospace applications. The wide range of electrical test & measurement capabilities and the broad experience of the EC group makes it unique in the microelectronics research landscape, proven by IHPs world-class scientific results and the steadily growing number of external test and measurement customers. Prototypes of complementary high voltage RF LDMOS transistors with separated body terminals are available on request. These devices enable the fabrication of integrated 45V RF MEMS driver and radiation tolerant 18V DC/DC buck converters for power management applications in aerospace and nuclear research.

Setup for testing the radiation tolerance of RF LDMOS power transistors against ionizing radiation.

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.