Emerging Devices & Technologies

Fields

Si-based process technologies for RF, THz, and optoelectronic applications
High-speed SiGe heterojunction bipolar transistors (HBT)
BiCMOS integration
Integration of optical components in SiGe BiCMOS

Focus

A major focus of the process integration group is the development of high-speed SiGe BiCMOS technologies. These activities reach from basic device research to qualification of fabrication processes according to industry standards. Current research activities are directed towards SiGe HBTs with maximum oscillation frequencies of 0.7 THz.

A further research area is the development of technologies for high-speed electronic-photonic integrated circuit. This includes the integration of optical functions such as waveguides, photo diodes, and electro-optical modulators in SiGe BiCMOS technologies.

Main Achievements

Several generations of high-speed SiGe heterojunction bipolar transistors (HBT) have been developed and integrated in 0.25 µm and 0.13 µm BiCMOS technologies which are available for chip fabrication via IHP’s MPW and prototyping service. The 0.13 µm BiCMOS process SG13G2 represents the fastest currently available SiGe HBT technology featuring peak f_T/f_max values of 300 GHz/500 GHz. These developments were based on a series of pioneering contributions to the development of SiGe HBTs including the introduction of carbon doping for stabilizing steep base doping profiles and new device constructions with reduced parasitic resistances and capacitance.