• Start
  • Departments print
  • Technology print
  • Heterointegration of Devices & Technologies

Heterointegration of Devices & Technologies


  • Integration of RF-MEMS into BiCMOS for mm-wave applications
  • Wafer-level 3D integration & mm-wave packaging for miniaturized RF microsystems
  • BiCMOS embedded microfluidics for biosensors and THz-sensing


The objective of heterointegration is the realization of multifunctional high frequency systems with increased functionality, higher performance and smaller form factor. RF-MEMS components like switches and varactors are embedded into the BiCMOS technology to prevent from significant interconnection losses making them promising for fully embedded solutions at mm-wave frequencies. The topic of 3D Integration is aimed to provide wafer bonding technologies and components like Through-Silicon Via (TSV) to combine different functionalities, semiconductor technologies (III-V, CMOS, …) and technology nodes for RF applications. BiCMOS embedded microfluidics is one example for the combination of different functionalities which enables a small-size, low-cost and high reproducibility BiCMOS integrated microfluidic platform for bio-sensors and THz-sensing applications.

Main Achievements

The integration of different technologies and components into IHPs BiCMOS technologies has been successfully demonstrated. BiCMOS embedded RF-MEMS switches have been developed providing a very low insertion loss and high isolation from 30 to above 140 GHz together with a flexible wafer-level packaging and high reliability. High aspect ratio TSVs are integrated into IHPs BiCMOS technology useful for 3D integration and ideal RF grounding with very lowest parasitics which has been demonstrated with a Traveling Wave Amplifier in a 70 µm thin BiCMOS chip. Finally a fully embedded BiCMOS microfluidic platform has been fabricated with a 120 GHz dielectric sensor for the detection of liquid/gas permittivity.


Dipl.-Ing. (FH)

Matthias Wietstruck



Im Technologiepark 25

15236 Frankfurt (Oder)


Phone: +49 335 5625 609



Semiconductor-based Ultrawideband Micromanipulation of CAncer STEm Cells


Novel Ring Resonator Combining Strong Field Confinement With High Optical Quality Factor


Hybridintegrationsplattform für zuverlässige Hochfrequenzschaltkreise


Artificial permittivity and permeability engineering for future generation sub wavelength analogue integrated circuits and systems


Advanced Technological Solutions for X band Earth Observation Systems


Bendable wireless sensor and millimetre-wave transmitters using thinned SiGe BiCMOS

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.