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The cross section on the left shows a silicon-germanium heterobipolar transistor (SiGe HBT) of the latest generation, recorded by a transmission electron microscope (TEM). The measurement curves on the right are used to determine the transit frequency, fT, and the maximum oscillation frequency, fmax. © IHP 2016
Fastest Si-based transistor in the world

IHP presents the fastest silicon-based transistor in the world. Contribution at the renowned semiconductors conference IEDM in San Francisco.

IHP supports Silicon RFIC Interoperability with Keysight Technologies’ ADS 2015 Release

IHP today announced support for ADS-Virtuoso Interoperable process design kits (PDKs). The PDKs are designed for use with Keysight’s Advanced Design System (ADS) EDA software and provide users access to a new Silicon RFIC interoperability feature available in ADS 2015.01.

Silicon-Germanium Chip Sets New Speed Record

A research collaboration consisting of IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.

Erfolgreicher Abschluss der MEMSWAVE 2013 in Potsdam

Mit einer Institutsbesichtigung des IHP endete am 04.07.2013 eine internationale Tagung zu neuesten Ergebnisse im Bereich der Entwicklung von Mikrosystemen - MEMS (Micro-Electro-Mechanical Systems).

Forschungsergebnis aus Zusammenarbeit der Universität Ulm und des IHP ausgezeichnet

Preis bei nationaler Mikrowellenkonferenz in Frankreich an Dr. Valenta, Universität Ulm


Bisher kleinster elektro-optischer Modulator realisiert als Wellenleiter-Resonator auf Basis photonischer Kristalle mit einer Länge von 8 μm und einem Querschnitt von 220 x 450 nm.

Tutorial: MPW for IHP Silicon Photonics Technology SG25ESS

In the frame of ePIXfab IHP will offer a silicon photonics multi-project wafer (MPW) service. The service will provide access to IHP's SG25ESS technology that comprises fabrication of passive nano-waveguide structures using a two-etch-steps process. The tutorial offers an introduction to the setup of IHP's MPW and a short demonstration of how to use the design kit software offered by IHP.

Design Kit Tutorial for 0.13 µm SiGe BiCMOS

Cadence AMS flow and mixed signal simulation in IHP SG13 technologies(IIS Erlangen, June 26-27, 2012)

Success story of Dotfive

Scientist from IHP organizes symposium at Spring Meeting of EMRS in Nice

A symposium on “X-ray techniques for materials research” will be held during the forthcoming spring meeting of the European Materials Research Society (E-MRS) in Nice, France, with one of the symposium organizers, Dr. Mario Birkholz, coming from IHP.

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.