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  • Future work

GaP for THz

Future work is focused on achieving improved 2D GaP layer growth conditions in order to prepare truly pseudomorphic GaP/Si0.8Ge0.2/Si(001) heterostructures with low defect densities and layer roughness. Therefore, further GaP deposition process developments by GSMBE and MOCVD systems are currently under way with our partners at Humboldt-University Berlin and Helmholtz-Centre for Material and Energy Berlin. As one part of these studies, we will investigate (selective) GaP growth in local HBT Si0.8Ge0.2/Si(001) mesa structures. Furthermore, electronic and electric investigations (band offsets, transport properties etc.) for GaP/Si0.8Ge0.2/Si(001) heterostacks at HBT model structures will be performed.

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.