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R2RAM

Radiation Hard Resistive Random-Access Memory

Objective

R2RAM aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles.

IHP's Contribution

  • Radhard RRAM Technology, Architecture and Cell Development
  • Design Enablement Platform
  • Test vehicle fabrication

Funding

H2020 Grant No. 640073

Project Partners

  • Consorzio Nazionale Interuniversitario Per La Nanoelettronica (Italy)
  • RedCat Devices Srl (Italy)
  • Jyvaskylan Yliopisto (Finland)
The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.