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HyTeck

Hybridintegrationsplattform für zuverlässige Hochfrequenzschaltkreise

Objective

The project HyTeck aims to develop a fan-out wafer-level packaging (FOWLP) platform for the hybrid integration of SiGe BiCMOS and GaN. The potential of this FOWLP technology will be evaluated in terms of high complexity, high power density and the combination of different technologies. A co-design environment will be developed, to ensure an efficient chip-package co-design, which is a key requirement for future high performance mm-wave packages.

IHP's Contribution

IHP is responsible for the EM and thermal design of the FOWLP technology enabling the desired materials, the RDL layer stack and the design rules. In addition, IHP develops a design flow and environment enabling a highly efficient SiGe BiCMOS FOWLP packaging design.

Funding

This project is funded by the BMBF under grant agreement No 16ES0713.

Project Partners

  • Rohde & Schwarz

  • Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration (IZM)

  • Fraunhofer-Institut für Angewandte Festkörperphysik IAF

  • AMIC Angewandte Micro-Messtechnik GmbH

  • Unity Semiconductor GmbH

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.