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Investigation of the long-term degradation of the high-frequency behavior of SiGe heterojunction bipolar transistors and circuits


The overall objectives of this project are the experimental investigation and preliminary modeling of long-term degradation effects SiGe HBTs and selected mm-wave circuit blocks. In particular:

  • The investigations will be performed for the most advanced IHP HBT technologies.

  • The investigations will focus heavily on obtaining experimental results with the emphasis on determining the amount of degradation in high-frequency device and circuit performance from stress experiments on both single devices and circuits.

  • Preliminary (preferably physics-based) formulations for describing time dependent degradation effects in the HBTs and their contact regions will be developed that are suitable for compact models.

IHP's Contribution

Process integration, device and circuit fabrication, long-term DC stress testing and 1/f noise measurements pre/post stress.

Development of reliability related HBT parameter determination; gaining a physical understanding of the degradation mechanisms and their impact on RF circuit performance.


This project has received funding by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) – Project No. 391631565.

Project Partners

  • Chair for Electron Devices and Integrated Circuits (CEDIC), TU Dresden

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.