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TARANTO

TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns

Objective

The TARANTO project targets to break the technological barriers to the development of the next BiCMOS technology platforms, allowing the improvement of the performance of the HBT (Heterojunction Bipolar Transistors) with a much higher level of integration. This new generation of transistors HBT will be a key factor to meet the needs of high-speed communications systems and high data rate required for the integration of heterogeneous intelligent systems as well as for intelligent mobility systems that will be used in future fully automated transport systems. The main objectives of this project will be to develop transistors HBT offering high maximum frequency (Fmax: 600GHz) built to very high density CMOS processes: 130 / 90nm for IFX, 55 / 28nm to ST, while IHP will work on the project to achieve maximum frequencies of 700GHz remaining compatible with IFX and ST BiCMOS processes.

IHP's Contribution

In WP1, IHP addresses the integration of SiGe HBTs with 700 GHz fMAX in its 130nm BiCMOS process. In parallel, an alternative HBT concept with epitaxial base link (EBL) and selective base epitaxy is optimized for applications in industrial BiCMOS platforms.

In WP2, IHP works on high-frequency characterization of SiGe HBTs by on-wafer calibrated S-parameter measurements up to 325 GHz. The safe-operation-area of advanced SiGe HBTs is explored in collaboration with project partners.

In WP3, IHP develops circuit building blocks for beam steering systems at 28 GHz/39 GHz and 140 GHz. 5G system demonstrators are addressed in collaboration with Nokia.

Funding

European Commission and the German Federal Ministry of Education and Research (BMBF) under the contract No. 737454 – ECSEL TARANTO.

Project Partners

  • STMicroelectronics S.A., France (Coordinator)
  • STMicroelectronics Crolles 2 SAS, France
  • Université de Montpellier, France
  • Université de Bordeaux, France
  • Université de Lille, France
  • Université des sciences et technologies de Lille, France
  • XMOD Technologies, France
  • INRAS GmbH, Austria
  • Universität Linz, Austria
  • Infineon Technologies AG, Germany
  • Infineon Technologies Dresden GmbH & Co. KG, Germany
  • Micram Microelectronic GmbH, Germany
  • Ruhr-Universität Bochum, Germany
  • Technische Universität Dresden, Germany
  • Universität des Saarlandes, Germany
  • Universität Stuttgart, Germany
  • I.S.D. Lyseis Olokriromenon Systimatonanonymos Etaireia, Greece
  • Politecnico di Milano, Italy
  • STMicroelectronics S.r.l., Italy
  • Università degli studi di Modena e Reggio Emilia, Italy
  • Università degli studi di Pavia, Italy
  • Università degli studi di Roma la sapienza, Italy
  • Interuniversitair Micro-Electronica Centrum, Belgium
  • DICE Danube Integrated Circuit Engineering GmbH & Co. KG, Austria
  • Università della Calabria, Italy
  • SIAE MICROELETTRONICA S.p.A., Italy
  • Université Grenoble Alpes, France
  • Karlsruher Institut für Technologie, Germany
  • Alcatel-Lucent Deutschland AG, Germany (Participation ended)
  • Nokia Solutions and Networks GmbH & CO.KG, Germany
  • Bergische Universität Wuppertal, Germany
  • Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany
  • RWTH Aachen University

Selected Publications

(1) P. Chevalier et al., “SiGe BiCMOS Current Status and Future Trends in Europe”, IEEE BCICTS 2018.

 

(2) H. Rücker, B. Heinemann, “High-Performance SiGe HBTs for Next Generation BiCMOS Technology”, Semicond, Sci. Technol., vol. 33, p. 114003 (2018).

 

(3) D. Wolansky et al., “Impact of nickel silicide formations on SiGe BiCMOS devices”, Semicond. Sci. Technol., vol. 33, p. 124003 (2018).

 

(4) C. Mukherjee et al., “A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions”, Solid State Electronics, vol. 163, p. 107635 (2020).

 

(5) H. Rücker, B. Heinemann, “Device Architectures for High-Speed SiGe HBTs”, IEEE BCICTS 2019.

 

(6) A. Karakuzulu et al. “Low Insertion Loss D-Band SPDT Switches Using Reverse and Forward Saturated SiGe HBTs”, IEEE Radio Wireless Symp. 2019.

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.